AOB2906

AOT2906/AOB2906 100V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charger • Optimized fast-switching applications Applications ID (at VGS=10V) 100V 122A RDS(ON) (at VGS=10V) < 6.2mΩ < 5.9mΩ∗ RDS(ON) (at VGS=8V) < 7.2mΩ < 6.9mΩ∗ 100% UIS Tested 100% Rg Tested • Synchronous Rectifiers in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO-263 D2PAK TO220 Top View Bottom View D Top View Bottom View D D D D G G D S S AOT2906 D G G S S G S AOB2906 Orderable Part Number Package Type Form Minimum Order Quantity AOT2906 AOB2906 TO-220 TO-263 Tube Tape & Reel 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C Power Dissipation B TC=100°C C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Steady-State Steady-State Maximum Junction-to-Case * Surface mount package TO263(AOB2906) Rev.2.0: May 2016 V A 90 25.5 IDSM TA=70°C ±20 310 IDM TA=25°C Continuous Drain Current Units V 122 ID TC=100°C Maximum 100 A 20.5 IAS 33 A EAS 54 mJ VSPIKE 120 V 187 PD W 94 8.3 PDSM TJ, TSTG Symbol RθJA RθJC W 5.3 -55 to 175 Typ 12 50 0.62 www.aosmd.com °C Max 15 60 0.8 Units °C/W °C/W °C/W Page 1 of 6 AOT2906/AOB2906 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA Static Drain-Source On-Resistance 1 TJ=55°C VGS=10V, ID=20A ±100 nA 2.9 3.5 V TO-220 5.1 6.2 TJ=125°C 8.2 10 2.3 VGS=8V, ID=20A TO-220 5.5 7.2 mΩ TO-263 4.8 5.9 mΩ VGS=8V, ID=20A TO-263 5.2 6.9 mΩ 1 V 118 A VDS=5V, ID=20A 60 VSD Diode Forward Voltage IS=1A, VGS=0V 0.69 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr S 2685 pF 1465 pF 52 f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) Qgs mΩ VGS=10V, ID=20A Forward Transconductance Crss Units µA 5 gFS Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=10V, VDS=50V, ID=20A VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 0.6 pF 1.2 1.8 Ω 44 65 nC 10 nC 12 nC 14 ns 18 ns 32 ns 22 ns IF=20A, di/dt=500A/µs 43 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 215 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 8V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=0.8°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: May 2016 www.aosmd.com Page 4 of 6 AOT2906/AOB2906 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 140 180 120 Power Dissipation (W) 160 Current rating ID (A) 140 120 100 80 60 40 100 80 60 40 20 20 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: May 2016 www.aosmd.com Page 5 of 6 AOT2906/AOB2906 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: Resistive Switching Test Circuit & Waveforms Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: May 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6