AOB290L

AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 100V 140A RDS(ON) (at VGS=10V) < 3.5mΩ 100% UIS Tested 100% Rg Tested TO220 Top View Bottom View ∗ (< 3.2mΩ ) Top View TO-263 D2PAK D Bottom View D D D G D S S D D G G S G AOT290L VGS Gate-Source Voltage TC=25°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH VDS Spike I Power Dissipation C 10µs TC=25°C B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 Rev.4.0: July 2016 Steady-State Steady-State A IAS, IAR 100 A EAS, EAR 500 mJ VSPIKE 120 V 500 W 250 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s A 18 PDSM TA=70°C V 15 PD TC=100°C ±20 500 IDSM TA=70°C Units V 110 IDM TA=25°C Continuous Drain Current Maximum 100 140 ID TC=100°C S S AOB290L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current G G -55 to 175 Typ 12 50 0.25 www.aosmd.com °C Max 15 60 0.3 Units °C/W °C/W °C/W Page 1 of 6 AOT290L/AOB290L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Conditions Min ID=250µA, VGS=0V 100 Typ 1 TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.9 ID(ON) On state drain current VGS=10V, VDS=5V 500 VGS=10V, ID=20A TJ=125°C 100 nA 3.5 4.1 V 2.7 3.5 4.4 5.7 3.2 A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance TO263 VDS=5V, ID=20A 2.5 gFS VSD Diode Forward Voltage IS=1A,VGS=0V 0.67 IS Maximum Body-Diode Continuous CurrentG VGS=10V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime 50 mΩ S 1 V 140 A 7180 9550 pF 2780 3700 pF 42 72 pF Ω VGS=0V, VDS=0V, f=1MHz 1.7 VGS=10V, VDS=50V, ID=20A 33 nC 21 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs µA 5 IGSS TO220 Units V VDS=100V, VGS=0V Zero Gate Voltage Drain Current Max 90 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 126 nC 31 69 ns 24 53 ns 45 99 ns tf Turn-Off Fall Time 27 60 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 65 91 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 460 644 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using