AOB409L

AOB409L 60V P-Channel MOSFET General Description Product Summary The AOB409L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=-10V) -60V -31.5A RDS(ON) (at VGS=-10V) < 38mΩ RDS(ON) (at VGS =-4.5V) < 50mΩ 100% UIS Tested 100% Rg Tested TO-263 D2PAK Top View D Bottom View D D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C V A -85 -5 IDSM TA=70°C ±20 -22 IDM TA=25°C Units V -31.5 ID TC=100°C Maximum -60 A -4 Avalanche Current C IAS, IAR 37 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 68 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: Sep. 2011 2.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.3 TJ, TSTG Symbol t ≤ 10s W 41.6 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83.3 PD TC=100°C -55 to 175 Typ 11 47 1.5 °C Max 15 60 1.8 Units °C/W °C/W °C/W Page 1 of 6 AOB409L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -60 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS， ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V -85 TJ=55°C -5 nA -2.4 V 30 38 53 66 VGS=-4.5V, ID=-20A 39 50 32 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA ±100 Static Drain-Source On-Resistance Output Capacitance Units -2.1 VGS=-10V, ID=-20A Coss Max V VDS=-60V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-30V, f=1MHz A -0.72 mΩ mΩ S -1 V 60 A 1969 2461 2953 pF 125 178 231 pF 72 120 168 pF 2 4 Ω VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge 34 43 52 nC Qg(4.5V) Total Gate Charge 16 19.7 24 nC 8 10.2 12 nC 5 8.9 12.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=-10V, VDS=-30V, ID=-20A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs 18 25.7 33 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 117 167 217 VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω 12 ns 14.5 ns 38 ns 15 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using