AOB411L

AOB411L 60V P-Channel MOSFET General Description Product Summary The AOB411L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS -60V -78A ID (at VGS=-10V) RDS(ON) (at VGS=-10V) < 16.5mΩ RDS(ON) (at VGS=-4.5V) < 22mΩ 100% UIS Tested 100% Rg Tested D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C V Avalanche Current C IAS, IAR -6.5 -77 Avalanche energy L=0.1mH C EAS, EAR 296 TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev 0: Mar. 2011 Steady-State Steady-State W 2.1 RθJA RθJC www.aosmd.com W 1.3 TJ, TSTG Symbol t ≤ 10s A mJ 93 PDSM TA=70°C A 187 PD TC=100°C A -8 IDSM TA=70°C ±20 -55 -230 IDM TA=25°C Continuous Drain Current Units V -78 ID TC=100°C Maximum -60 -55 to 175 Typ 11 47 0.6 °C Max 15 60 0.8 Units °C/W °C/W °C/W Page 1 of 6 AOB411L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V VDS=-60V, VGS=0V -60 -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -230 VGS=-10V, ID=-20A TJ=125°C VGS=-4.5V, ID=-20A gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current G IS VDS=-5V, ID=-20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, ID=-20A Units V TJ=55°C Static Drain-Source On-Resistance Max -1 VGS(th) RDS(ON) Typ µA ±100 nA -2 -2.5 V 13.5 16.5 20.5 25 17 22 mΩ -1 -105 V A 48 -0.7 mΩ S A 4260 5330 6400 pF 335 483 630 pF 140 234 330 pF 1.4 2.8 4.2 Ω 65 83 100 nC 35 40 50 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs 18 27 36 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 110 165 215 VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω 15 nC 18 nC 17.5 ns 20 ns 83.5 ns 37 ns ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using