AOB4184L

AOB4184 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB4184/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the 2 D PAK package, this device is well suited for high current load applications. AOB4184 and AOB4184L are electrically identical. -RoHS Compliant -AOB4184L is Halogen Free TO-263 D2PAK Features VDS (V) =40V ID = 30 A (V GS = 10V) RDS(ON) < 10.5 m Ω (VGS = 10V) RDS(ON) < 13 mΩ (V GS = 4.5V) 100% UIS Tested! Top View D D S S G G Bottom View G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain A Current Avalanche Current C C Maximum 40 ±20 30 24 120 12 10 35 61 50 25 2.5 1.6 -55 to 175 Units V V TC=25°C TC=100°C TC=25°C TC=70°C IDSM IAR EAR PD PDSM TJ, TSTG ID IDM A A mJ W W °C Repetitive avalanche energy L=100uH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient B Maximum Junction-to-Case Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 11 42 2.4 Max 17 50 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOB4184 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=40V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A, VGS=0V Diode Forward Voltage G Maximum Body-Diode Continuous Current 1250 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 165 95 2 22 VGS=10V, VDS=20V, ID=20A 11 3.5 4.5 VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 15 48 TJ=125°C 1.7 120 8.5 13.2 10 100 0.72 1 30 1500 215 135 3.5 27.2 13.6 4.5 6.4 6.4 17.2 29.6 16.8 19 59 25 78 1800 280 190 5 35 18 6 9 10.5 17 13 2.1 Min 40 1 5 ±100 3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using