AOT42S60/AOB42S60
600V 37A α MOS
TM
Power Transistor
General Description
Product Summary
The AOT42S60 & AOB42S60 have been fabricated using
TM
the advanced αMOS high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these devices can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
700V
IDM
166A
RDS(ON),max
0.109Ω
Qg,typ
40nC
Eoss @ 400V
9.2µJ
100% UIS Tested
100% Rg Tested
Top View
TO-263
D2PAK
TO-220
G
D
D
S
G
S
S
G
AOT42S60
AOB42S60
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT42S60L
AOB42S60L
TO-220 Green
TO-263 Green
Tube
Tape & Reel
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT42S60/AOB42S60
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
TC=100°C
Pulsed Drain Current
Avalanche Current
C
C
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B
Derate above 25 oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Rev4: April 2014
V
37
ID
23
IDM
C
Repetitive avalanche energy
±30
Units
V
A
166
IAR
11
A
EAR
234
mJ
EAS
1345
mJ
W
417
PD
3.3
100
20
-55 to 150
o
W/ C
300
°C
AOT42S60/AOB42S60
Units
dv/dt
TJ, TSTG
TL
Symbol
RθJA
RθCS
RθJC
www.aosmd.com
V/ns
°C
65
°C/W
0.5
0.3
°C/W
°C/W
Page 1 of 6
AOT42S60/AOB42S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
Units
600
-
-
650
700
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
-
-
1
VDS=480V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
-
±100
3.2
3.8
nΑ
V
VGS=10V, ID=21A, TJ=25°C
-
0.095
0.109
Ω
VGS=10V, ID=21A, TJ=150°C
-
0.27
0.31
Ω
IS=21A,VGS=0V, TJ=25°C
-
0.84
-
V
Maximum Body-Diode Continuous Current
-
-
37
A
Maximum Body-Diode Pulsed Current
-
-
166
A
-
2154
-
pF
-
135
-
pF
-
103
-
pF
-
344
-
pF
VGS=0V, VDS=100V, f=1MHz
-
2.7
-
pF
VGS=0V, VDS=0V, f=1MHz
-
1.7
-
Ω
-
40
-
nC
-
11.7
-
nC
nC
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
2.5
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=480V, ID=21A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
11.9
-
tD(on)
Turn-On DelayTime
-
38.5
-
ns
tr
Turn-On Rise Time
-
53
-
ns
-
136
-
ns
-
46
-
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
VGS=10V, VDS=400V, ID=21A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=21A,dI/dt=100A/µs,VDS=400V
-
473
-
ns
Irm
IF=21A,dI/dt=100A/µs,VDS=400V
-
38.5
-
Qrr
Body Diode Reverse Recovery Charge IF=21A,dI/dt=100A/µs,VDS=400V
-
10.5
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
