AOB4S60L

AOT4S60/AOB4S60/AOTF4S60 600V 4A α MOS TM Power Transistor General Description Product Summary The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 16A RDS(ON),max 0.9Ω Qg,typ 6nC Eoss @ 400V 1.5µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT4S60L & AOB4S60L & AOTF4S60L Top View TO-220 TO-263 2 D D PAK TO-220F D G G D S AOT4S60 G D S S AOTF4S60 AOB4S60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT4S60/AOB4S60 Symbol Drain-Source Voltage VDS 600 Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C S G AOTF4S60 V ±30 4 ID Units V 4* 3.7 3.7* A Pulsed Drain Current C IDM 16 Avalanche Current C IAR 1.6 A Repetitive avalanche energy C EAR 38 mJ Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range EAS PD 77 31 W 0.67 0.25 W/ oC 100 20 -55 to 150 dv/dt TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA V/ns °C 300 °C AOT4S60/AOB4S60 AOTF4S60 Units 65 65 °C/W 0.5 1.5 -4 °C/W °C/W RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev 1: Jan 2012 mJ 83 www.aosmd.com Page 1 of 6 AOT4S60/AOB4S60/AOTF4S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 600 - - ID=250µA, VGS=0V, TJ=150°C 650 700 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V - - 1 VDS=480V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.9 3.5 4.1 nΑ V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A, TJ=25°C - 0.78 0.9 Ω VGS=10V, ID=2A, TJ=150°C - 2 2.4 Ω VSD Diode Forward Voltage IS=2A,VGS=0V, TJ=25°C - 0.81 - V IS Maximum Body-Diode Continuous Current - - 4 A ISM Maximum Body-Diode Pulsed CurrentC - - 16 A - 263 - pF - 21 - pF - 17.1 - pF - 47.7 - pF VGS=0V, VDS=100V, f=1MHz - 0.75 - pF VGS=0V, VDS=0V, f=1MHz - 18 - Ω - 6 - nC - 1.6 - nC nC DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=2A Qgs Gate Source Charge Qgd Gate Drain Charge - 1.8 - tD(on) Turn-On DelayTime - 18 - ns tr Turn-On Rise Time - 8 - ns - 40 - ns - 12 - ns IF=2A,dI/dt=100A/µs,VDS=400V tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time VGS=10V, VDS=400V, ID=2A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current - 177 - ns Irm IF=2A,dI/dt=100A/µs,VDS=400V - 12 - Qrr Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=400V - 1.5 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using