AOB5B65M1

AOT5B65M1/AOB5B65M1 650V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 5A VCE(sat) (TJ=25°C) 1.57V Applications • Motor Drives • Home appliance applications such as refrigerators and washing machines • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-263 D2PAK C TO-220 G C E E G G E AOT5B65M1 Orderable Part Number C AOB5B65M1 Package Type Form Minimum Order Quantity AOT5B65M1 TO220 Tube TO263 Tape & Reel AOB5B65M1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT5B65M1/AOB5B65M1 Collector-Emitter Voltage V CE 650 Gate-Emitter Voltage V GE ±30 1000 800 Units V V Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I CM 15 A Turn off SOA, VCE ≤ 650V, Limited by TJmax I LM 15 A Continuous Diode Forward Current TC=25°C TC=100°C IF 10 5 10 5 A A Diode Pulsed Current, Limited by TJmax I FM 15 A Short circuit withstanding time 1) VGE = 15V, VCC ≤ 400V, TJ ≤ 175°C t SC 5 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range PD T J , T STG 83 42 -55 to 175 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Parameter Symbol AOT5B65M1/AOB5B65M1 R θ JA Maximum Junction-to-Ambient 65 R θ JC Maximum IGBT Junction-to-Case 1.8 Maximum Diode Junction-to-Case R θ JC 4.7 1) Allowed number of short circuits: 1s. Rev.1.0: April 2015 www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V V CE(sat) VGE=15V, IC=5A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IC=5A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 1.57 1.98 TJ=125°C - 1.87 - TJ=175°C - 2.05 - V TJ=25°C - 1.8 2.25 TJ=125°C - 1.79 - TJ=175°C - 1.73 - - 5.1 - V V TJ=25°C - - 10 TJ=125°C - - 100 TJ=175°C - - 5000 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=5A - 4.1 - S - 348 - pF - 36 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 13 - pF Qg Total Gate Charge - 14 - nC Q ge Gate to Emitter Charge - 3 - nC Q gc Gate to Collector Charge - 6.5 - nC - 30 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 6 - Ω t D(on) Turn-On DelayTime - 8.5 - ns tr Turn-On Rise Time - 13 - ns - 106 - ns - 18 - ns I C(SC) VGE=15V, VCC=520V, IC=5A VGE=15V, VCC=400V, tsc≤5us, TJ≤175°C Short circuit collector current t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E on Turn-On Energy - 0.08 - mJ E off Turn-Off Energy - 0.07 - mJ E total t rr Total Switching Energy - 0.15 - mJ Diode Reverse Recovery Time - 195 - Q rr Diode Reverse Recovery Charge TJ=25°C VGE=15V, VCC=400V, IC=5A, RG=60Ω - 0.24 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) - 2.78 - A t D(on) Turn-On DelayTime - 7 - ns tr Turn-On Rise Time - 14 - ns t D(off) Turn-Off Delay Time - 130 - ns tf Turn-Off Fall Time - 31 - ns E on Turn-On Energy - 0.09 - mJ E off Turn-Off Energy - 0.12 - mJ E total t rr Total Switching Energy - 0.21 - mJ Diode Reverse Recovery Time - 273 - Q rr Diode Reverse Recovery Charge - 0.42 - ns µC I rm Diode Peak Reverse Recovery Current - 3.6 - A TJ=25°C IF=5A, dI/dt=200A/µs, VCC=400V I rm TJ=175°C VGE=15V, VCC=400V, IC=5A, RG=60Ω TJ=175°C IF=5A, dI/dt=200A/µs, VCC=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2015 www.aosmd.com Page 2 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 25 20V 17V 15V 20 20V 20 17V 15V IC (A) IC (A) 13V 15 11V 10 5 15 9V 10 VGE= 7V 5 13V 11V 9V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 VCE(V) Figure 2: Output Characteristic (Tj=175°C ) VCE(V) Figure 1: Output Characteristic (Tj=25°C ) 15 15 VCE=20V 12 9 9 175°C 175°C IF (A) IC (A) 12 6 6 25°C 3 -40°C 3 -40°C 25°C 0 0 3 6 9 12 15 0 1 VGE(V) Figure 3: Transfer Characteristic 3 4 2.5 IC=10A 4 5 10A 2 3 VSD (V) VCE(sat) (V) 3 VF (V) Figure 4: Diode Characteristic 5 IC=5A 2 2 1.5 5A 1 IF=1A 1 0.5 IC=2.5A 0 0 0 25 75 100 125 150 175 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: April 2015 50 www.aosmd.com 0 25 50 75 100 125 150 175 Temperature (°C ) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=5A 12 1000 Capacitance (pF) VGE(V) Cies 9 6 3 100 Coes 10 Cres 0 1 0 4 8 12 16 20 0 8 Qg(nC) Figure 7: Gate-Charge Characteristics 16 24 32 40 VCE(V) Figure 8: Capacitance Characteristic 100 Power Disspation (W) 80 60 40 20 0 25 50 75 100 125 150 175 12 1E-03 10 1E-04 8 1E-05 ICE(S) (A) Current rating IC(A) TCASE(°C) Figure 10: Power Disspation as a Function of Case 6 VCE=650V 1E-06 4 1E-07 2 1E-08 0 VCE=520V 1E-09 25 50 75 100 125 150 175 TCASE(°C) Figure 11: Current De-rating Rev.1.0: April 2015 0 25 50 75 100 125 150 175 Temperature (°C ) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 100 10 1 100 10 1 2 4 6 8 IC (A) Figure 13: Switching Time vs. IC (Tj=175°C,VGE=15V,VCE=400V,Rg=60Ω) 10000 10 0 100 0 25 200 300 400 500 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=175°C,VGE=15V,VCE=400V,IC=5A) 600 7 Td(off) Tf Td(on) Tr 6 VGE(TH)(V) 1000 Switching Time (nS) Td(off) Tf Td(on) Tr 1000 Switching Time (nS) 1000 Switching Time (nS) 10000 Td(off) Tf Td(on) Tr 100 5 4 3 10 2 1 1 25 Rev.1.0: April 2015 50 75 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V,VCE=400V,IC=5A,Rg=60Ω) 175 www.aosmd.com 50 75 100 125 150 175 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.6 0.8 Eoff Eoff Eon Switching Energy (mJ) SwitchIng Energy (mJ) 0.5 Etotal 0.4 0.3 0.2 0.1 0.7 Eon 0.6 Etotal 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 0 IC (A) Figure 17: Switching Loss vs. IC (Tj=175°C,VGE=15V,VCE=400V,Rg=60Ω) 100 300 400 500 600 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=175°C,VGE=15V,VCE=400V,IC=5A) 0.3 0.3 Eoff Eoff Eon Eon 0.25 Switching Energ y (mJ) 0.25 Switching Energy (mJ) 200 Etotal 0.2 0.15 0.1 0.05 Etotal 0.2 0.15 0.1 0.05 0 0 25 50 75 100 125 150 175 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=5A,Rg=60Ω) Rev.1.0: April 2015 www.aosmd.com 200 250 300 350 400 450 500 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=175°C,VGE=15V,IC=5A,Rg=60Ω) Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 25 400 20 320 15 240 25 175°C Irm(A) Qrr 320 10 Trr (nS) Qrr (nC) 25°C 480 20 175°C Trr 15 S 640 25°C 160 10 25°C 175°C 160 5 80 0 0 4 6 8 10 IF(A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µs) 4 6 8 10 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µs) 25 175°C 20 25°C 15 Qrr 35 175°C 280 28 Trr 25°C 210 21 S 500 350 Irm(A) 30 300 0 2 600 400 5 175°C Trr (nS) 2 Qrr (nC) Irm 25°C 0 S 140 200 14 175°C 10 175°C 100 5 25°C 0 0 200 300 400 500 600 di/dt (A/µS) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=5A) Rev.1.0: April 2015 7 S 25°C Irm 0 100 70 www.aosmd.com 0 100 200 300 400 500 600 di/dt (A/µS) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=5A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.8°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4.7°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: April 2015 www.aosmd.com Page 8 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: April 2015 www.aosmd.com Page 9 of 9