AOB66916L

AOT66916L/AOB66916L 100V N-Channel AlphaSGT General Description TM Product Summary • Trench Power AlphaSGT TM technology • Best in class on-resistance RDS(ON) • Lowers switching loss by lower Qrr than other MOSFET suppliers • Optimized voltage spike at SSR application • RoHS and Halogen-Free Compliant Applications VDS ID (at VGS=10V) 100V 120A RDS(ON) (at VGS=10V) < 3.6mΩ RDS(ON) (at VGS=6V) < 4.8mΩ 100% UIS Tested 100% Rg Tested • High frequency switching and synchronous rectification • BMS • Motor TO220 Top View Top View Bottom View TO-263 D2PAK Bottom View D D D D D G G D S S D G S G G AOT66916L S S AOB66916L Orderable Part Number Package Type Form Minimum Order Quantity AOT66916L AOB66916L TO-220 TO-263 Tube Tape & Reel 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C Avalanche Current C Avalanche energy Power Dissipation B Power Dissipation A L=0.1mH TC=25°C C TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: December 2018 IAS 80 A EAS 320 mJ 277 Steady-State Steady-State RqJA RqJC www.aosmd.com W 111 8.3 W 5.3 TJ, TSTG Symbol t ≤ 10s A 28.5 PDSM TA=70°C A 35.5 PD TC=100°C V 450 IDSM TA=70°C ±20 120 IDM TA=25°C Units V 120 ID TC=100°C Maximum 100 -55 to 150 Typ 12 50 0.35 °C Max 15 60 0.45 Units °C/W °C/W °C/W Page 1 of 6 AOT66916L/AOB66916L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C 5 nA 3.5 V 3.0 3.6 4.9 5.9 VGS=6V, ID=20A 3.6 4.8 TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A 80 VSD Diode Forward Voltage IS=1A, VGS=0V 0.68 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance μA ±100 Static Drain-Source On-Resistance Output Capacitance Units 2.95 2.5 VGS=10V, ID=20A Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge 0.7 mΩ S 1 V 120 A 6180 pF 1660 pF 29 f=1MHz mΩ 1.5 pF 2.3 Ω 78 nC 22 nC 15 nC 134 24 nC ns VGS=10V, VDS=50V, RL=2.5W, RGEN=3W 18 ns 52 ns 22 ns IF=20A, di/dt=500A/ms 45 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 287 ns nC Qgs Gate Source Charge Qgd Gate Drain Charge Qoss Output Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Time VGS=10V, VDS=50V, ID=20A VGS=0V, VDS=50V A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=0.45°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: December 2018 www.aosmd.com Page 4 of 6 AOT66916L/AOB66916L 320 140 280 120 240 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 160 120 80 100 80 60 40 20 40 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 8 TA=25°C 7 1000 5 Power (W) Eoss(uJ) 6 100 4 3 10 2 1 0 0 25 50 75 1 1E-05 100 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H) VDS (Volts) Figure 14: Coss stored Energy ZqJA Normalized Transient Thermal Resistance 0.001 10 1 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: December 2018 www.aosmd.com Page 5 of 6 AOT66916L/AOB66916L Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) Test Unclamped Inductive TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: December 2018 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6