AOB7S65L

AOT7S65L/AOB7S65L/AOTF7S65L/AOTF7S65 650V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 TM have been fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 750V IDM 30A RDS(ON),max 0.65Ω Qg,typ 9.2nC Eoss @ 400V 2µJ 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK TO-220F D D D G G D S AOT7S65 G D S S AOTF7S65(L) AOB7S65 Absolute Maximum Ratings TA=25°C unless otherwise noted AOT7S65L/AOB7S65L Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Pulsed Drain Current TC=100°C C ID AOTF7S65 650 AOTF7S65L ±30 VGS TC=25°C Continuous Drain Current S G 7 5 Units V V 7* 7* 5* 5* A IDM 30 Avalanche Current C IAR 1.7 A Repetitive avalanche energy C EAR 43 mJ Single pulsed avalanche energy G EAS TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range PD 0.8 dv/dt TJ, TSTG Maximum lead temperature for soldering J purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA A RθCS Maximum Case-to-sink Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.3.0 Sepetember 2017 86 104 35 0.3 100 20 -55 to 150 mJ 27 W 0.2 W/ oC V/ns °C 300 °C AOT7S65L/AOB7S65L AOTF7S65 AOTF7S65L 65 65 65 °C/W 0.5 1.2 -3.6 -4.7 °C/W °C/W www.aosmd.com Units Page 1 of 7 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Units 650 - - 700 750 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=650V, VGS=0V - - 1 VDS=520V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.6 3.3 4 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=3.5A, TJ=25°C - 0.54 0.65 Ω VGS=10V, ID=3.5A, TJ=150°C - 1.48 1.64 Ω IS=3.5A,VGS=0V, TJ=25°C - 0.82 1.2 V Maximum Body-Diode Continuous Current - - 7 A Maximum Body-Diode Pulsed CurrentC - - 30 A - 434 - pF - 30 - pF - 23 - pF - 80 - pF DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz VGS=0V, VDS=100V, f=1MHz - 1 - pF VGS=0V, VDS=0V, f=1MHz - 17.5 - Ω - 9.2 - nC - 2.5 - nC SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=3.5A Qgs Gate Source Charge Qgd Gate Drain Charge - 2.7 - nC tD(on) Turn-On DelayTime - 21 - ns tr Turn-On Rise Time - 14 - ns tD(off) Turn-Off DelayTime - 55 - ns tf trr Turn-Off Fall Time - 15 - ns VGS=10V, VDS=400V, ID=3.5A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=3.5A,dI/dt=100A/µs,VDS=400V - 224 - ns Irm IF=3.5A,dI/dt=100A/µs,VDS=400V - 19 - Qrr Body Diode Reverse Recovery Charge IF=3.5A,dI/dt=100A/µs,VDS=400V - 2.8 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using