AOC2401

AOC2401 30V P-Channel MOSFET General Description Product Summary The AOC2401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. VDS ID (at VGS=-10V) -30V -3A RDS(ON) (at VGS=-10V) < 41mΩ RDS(ON) (at VGS=-4.5V) < 47mΩ RDS(ON) (at VGS=-2.5V) < 58mΩ Typical ESD protection AlphaDFN 1.57x1.57_4 Top View HBM Class 2 D Bottom View Top View Bottom View 3 2 D D S G G Pin1(G) 4 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 TA=25°C Source Current (Pulse) Note2 TA=25°C Power Dissipation Note1 Junction and Storage Temperature Range Maximum -30 Units V VGS ID ±12 V IDM PD -45 TJ, TSTG Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A RθJA Maximum Junction-to-Ambient A D Steady-State Note 1. Mounted on minimum pad PCB Note 2. PW