AOC2411

AOC2411 30V General Description P-Channel MOSFET Product Summary The AOC2411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. Vds ID (at VGS=-4.5V) -30V -3.4A RDS(ON) (at VGS=-4.5V) < 45mΩ RDS(ON) (at VGS=-2.5V) < 60mΩ WLCSP 1.6x1.6_4 Bottom View 3 Equivalent Circuit Top View D 2 D D S G 4 Pin1(G) 1 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Maximum -30 Units V VGS ±12 V ID -3.4 Source Current (Pulse) Note2 ISM -52 Power Dissipation Note1 T =25°C A PD 0.8 Junction and Storage Temperature Range TJ, TSTG Gate-Source Voltage Source Current (DC) Note1 Thermal Characteristics Parameter Maximum Junction-to-Ambient Note1 Maximum Junction-to-Ambient Note1 Maximum Junction-to-Foot(Drain) TA=25°C Symbol t ≤ 5s Steady-State Steady-State RθJA RθJF A W -55 to 150 Typ 75 130 16 Max 90 155 20 °C Units °C/W °C/W °C/W Note 1. Mounted on minimum pad PCB Note 2. PW