AOC2412

AOC2412 20V N-Channel MOSFET General Description Product Summary The AOC2412 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 8V VGS(MAX) rating. VDS 20V 4.5A ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) < 23mΩ RDS(ON) (at VGS=2.5V) < 26mΩ RDS(ON) (at VGS=1.8V) < 30mΩ Typical ESD protection AlphaDFN 1.57x1.57_4 Top View HBM Class 3A D Bottom View Top View Bottom View 3 2 D D S G G Pin1(G) 4 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 TA=25°C Source Current (Pulse) Note2 TA=25°C Power Dissipation Note1 Junction and Storage Temperature Range VGS ID Rev.1.0 : December 2013 ±8 V A 65 TJ, TSTG www.aosmd.com Units V 4.5 IDM PD Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A RθJA Maximum Junction-to-Ambient A D Steady-State Note 1. Mounted on minimum pad PCB Note 2. PW