AOC2413

AOC2413 8V P-Channel MOSFET General Description Product Summary The AOC2413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS ID (at VGS=-2.5V) -8V -3.5A RDS(ON) (at VGS=-2.5V) < 28mΩ RDS(ON) (at VGS=-1.8V) < 32mΩ RDS(ON) (at VGS=-1.5V) < 37mΩ RDS(ON) (at VGS=-1.2V) < 47mΩ Typical ESD protection AlphaDFN 1.57x1.57_4 Top View HBM Class 3A D Bottom View Top View Bottom View 3 2 D D S G G Pin1(G) 4 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 TA=25°C Source Current (Pulse) Note2 TA=25°C Power Dissipation Note1 Junction and Storage Temperature Range VGS ID Rev.1.0 : December 2013 ±5 V A -50 TJ, TSTG www.aosmd.com Units V -3.5 IDM PD Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A RθJA Maximum Junction-to-Ambient A D Steady-State Note 1. Mounted on minimum pad PCB Note 2. PW