AOC2414

AOC2414 8V N-Channel MOSFET General Description Product Summary The AOC2414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 4.5A ID (at VGS=2.5V) RDS(ON) (at VGS=2.5V) < 19mΩ RDS(ON) (at VGS=1.8V) < 21mΩ RDS(ON) (at VGS=1.5V) < 24mΩ RDS(ON) (at VGS=1.2V) < 29mΩ Typical ESD protection AlphaDFN 1.57x1.57_4 Top View HBM Class 2 D Bottom View Top View Bottom View 3 2 D D S G G Pin1(G) 4 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 TA=25°C Source Current (Pulse) Note2 TA=25°C Power Dissipation Note1 Junction and Storage Temperature Range VGS ID Rev.1.0 : December 2013 ±5 V A 60 TJ, TSTG www.aosmd.com Units V 4.5 IDM PD Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A RθJA Maximum Junction-to-Ambient A D Steady-State Note 1. Mounted on minimum pad PCB Note 2. PW