AOC2421

AOC2421 8V P-Channel MOSFET General Description Product Summary The AOC2421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS ID (at VGS=-2.5V) -8V -2.5A RDS(ON) (at VGS=-2.5V) < 60mΩ RDS(ON) (at VGS=-1.8V) < 72mΩ RDS(ON) (at VGS=-1.5V) < 85mΩ RDS(ON) (at VGS=-1.2V) < 115mΩ Typical ESD protection AlphaDFN 0.97x0.97A_4 Top View HBM Class 2 D Bottom View Top View Bottom View 3 2 S S D G G Pin1(G) 4 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 TA=25°C Source Current (Pulse) Note2 TA=25°C Power Dissipation Note1 Junction and Storage Temperature Range VGS ID Rev.1.0 : December 2013 ±5 V A -25 TJ, TSTG www.aosmd.com Units V -2.5 IDM PD Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A RθJA Maximum Junction-to-Ambient A D Steady-State Note 1. Mounted on minimum pad PCB Note 2. PW