AOC2423

AOC2423 20V P-Channel MOSFET General Description Product Summary The AOC2423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. VDS ID (at VGS=-10V) -20V -2A RDS(ON) (at VGS=-10V) < 80mΩ RDS(ON) (at VGS=-4.5V) < 95mΩ RDS(ON) (at VGS=-2.5V) < 120mΩ Typical ESD protection AlphaDFN 0.97x0.97A_4 Top View HBM Class2 D Bottom View Top View Bottom View 3 2 S S D G G Pin1(G) 4 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 TA=25°C Source Current (Pulse) Note2 TA=25°C Power Dissipation Note1 Junction and Storage Temperature Range Maximum -20 Units V VGS ID ±12 V IDM PD -20 TJ, TSTG Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A RθJA Maximum Junction-to-Ambient A D Steady-State Note 1. Mounted on minimum pad PCB Note 2. PW