AOD1N60

AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. TO252 DPAK Top View Bottom View Top View VDS 700V@150℃ ID (at VGS=10V) 1.3A RDS(ON) (at VGS=10V) < 9Ω 100% UIS Tested! 100% Rg Tested! TO251A IPAK Bottom View TO251 Top View D Bottom View D D G S G D G AOI1N60 AOD1N60 G S S G D VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C D G AOU1N60 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage S S D S G Maximum 600 Units V ±30 V 1.3 ID 0.8 A IDM 4 Avalanche Current C IAR 1 A Repetitive avalanche energy C EAR 15 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 30 5 45 mJ V/ns W 0.36 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev 5: Aug 2011 PD TJ, TSTG TL Symbol RθJA RθCS Typical 45 Maximum 55 Units °C/W 2.3 0.5 2.8 °C/W °C/W RθJC www.aosmd.com Page 1 of 6 AOD1N60/AOU1N60/AOI1N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.6 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V 100 Gate Threshold Voltage VDS=5V,ID=250µA 3 µA 4.1 4.5 nΑ V 9 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.65A 7.5 gFS Forward Transconductance VDS=40V, ID=0.65A 0.9 VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current 1 A ISM Maximum Body-Diode Pulsed Current 4 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=1A S 105 130 160 pF 12 14.5 18 pF 1.5 1.8 2.2 pF 2.9 3.5 5.3 Ω 6.1 8 nC Qgs Gate Source Charge 1.3 2 nC Qgd Gate Drain Charge 3.1 4 nC tD(on) Turn-On DelayTime 10 13 ns tr Turn-On Rise Time 6.7 13 ns tD(off) Turn-Off DelayTime 20 26 ns tf trr Turn-Off Fall Time 11.5 23 ns IF=1.3A,dI/dt=100A/µs,VDS=100V 114 137 Qrr Body Diode Reverse Recovery Charge IF=1.3A,dI/dt=100A/µs,VDS=100V 0.63 0.76 ns µC Body Diode Reverse Recovery Time VGS=10V, VDS=300V, ID=1A, RG=25Ω A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using