AOD210

AOD210 30V N-Channel MOSFET General Description Product Summary The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode. VDS 30V 70A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 3mΩ RDS(ON) (at VGS = 4.5V) < 4mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev0 : May 2010 IAS, IAR 68 A EAS, EAR 231 mJ 150 Steady-State Steady-State W 75 2.7 RθJA RθJC www.aosmd.com W 1.7 TJ, TSTG Symbol t ≤ 10s A 18 PDSM TA=70°C A 23 PD TC=100°C V 390 IDSM TA=70°C ±20 55 IDM TA=25°C Continuous Drain Current Units V 70 ID TC=100°C Maximum 30 -55 to 175 Typ 14.2 39 0.8 °C Max 17 47 1 Units °C/W °C/W °C/W Page 1 of 6 AOD210 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 390 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs µA 100 nA 1.7 2.2 V 2.4 3 3.7 4.7 2.95 3.9 mΩ 1 V 70 A A 78 0.65 mΩ S 2800 3520 4300 pF 920 1320 1720 pF 50 90 155 pF 0.5 1 1.5 Ω 39 48 58 nC 17 22 27 nC 7 9 11 nC 4 7 10 nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ 11 ns 10 ns 38 ns 10 ns 14 21 28 40 58 76 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using