AOD2210

AOD2210/AOI2210 200V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 200V 18A RDS(ON) (at VGS=10V) < 105mΩ RDS(ON) (at VGS=5V) < 120mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO251A IPAK TO-252 DPAK Top View Top View Bottom View D Bottom View D D D D G S S G G D S S D G G S Orderable Part Number Package Type Form Minimum Order Quantity AOD2210 AOI2210 TO-252 TO-251A Tape & Reel Tube 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C TA=25°C Continuous Drain Avalanche Current Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C Power Dissipation B C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: August 2014 IAS 9 A EAS 4 mJ 240 V 100 2.5 Steady-State Steady-State W 1.6 TJ, TSTG Symbol t ≤ 10s W 50 PDSM TA=70°C A 2.5 PD TA=25°C Power Dissipation A A 3.0 VSPIKE TC=100°C V 45 IDSM C ±20 13 IDM TA=70°C Current Units V 18 ID TC=100°C Maximum 200 RθJA RθJC -55 to 175 Typ 15 41 1 www.aosmd.com °C Max 20 50 1.5 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 200 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 1.5 ±100 nA 2.0 2.5 V 87 105 185 225 120 RDS(ON) Static Drain-Source On-Resistance VGS=5V, ID=16A 93 gFS Forward Transconductance VDS=5V, ID=18A 40 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=18A Coss Units V VDS=200V, VGS=0V IDSS Max f=1MHz 1 V 18 A pF 74 pF 3.8 pF 2.2 3.3 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 27 40 nC Qg(4.5V) Total Gate Charge 12 20 Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=100V, ID=18A 1.1 mΩ S 2065 VGS=0V, VDS=100V, f=1MHz mΩ nC 7 nC Gate Drain Charge 3 nC Turn-On DelayTime 8 ns 10 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=100V, RL=5.5Ω, RGEN=3Ω 30 ns 4 ns IF=18A, dI/dt=500A/µs 60 Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 800 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.5°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: August 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS IAR (A) Peak Avalanche Current 100 120 TA=25°C Power Dissipation (W) 100 TA=100°C 10 TA=150°C TA=125°C 80 60 40 20 1 0 1 10 100 0 25 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 175 10000 20 TA=25 °C 1000 Power (W) Current rating ID(A) 15 10 100 10 5 0 0 25 50 75 100 125 150 175 1 1E-05 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 0.001 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: August 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: August 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6