AOD2610

AOD2610 60V N-Channel MOSFET General Description Product Summary The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 60V 46A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 10.7mΩ RDS(ON) (at VGS =4.5V) < 13.5mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A 140 10 IDSM TA=70°C ±20 36 IDM TA=25°C Units V 46 ID TC=100°C Maximum 60 A 8 Avalanche Current C IAS, IAR 36 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 65 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: Oct. 2011 2.5 Steady-State Steady-State RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s W 35.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 71.5 PD TC=100°C -55 to 175 Typ 15 41 1.7 www.aosmd.com °C Max 20 50 2.1 Units °C/W °C/W °C/W Page 1 of 6 AOD2610 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 140 TJ=55°C TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance µA 5 VGS=10V, ID=20A Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 60 VDS=60V, VGS=0V IDSS RDS(ON) Typ ±100 nA 2 2.5 V 8.7 10.7 15.7 18.9 10.7 13.5 mΩ 1 V 46 A A 85 0.72 mΩ S 1605 2007 2410 pF 120 177 230 pF 3.5 12.5 21.5 pF 0.6 1.2 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16.5 20.6 25 nC Qg(4.5V) Total Gate Charge 5.9 8.5 11 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=20A VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 5 nC 2.2 nC 8.5 ns 3.5 ns 27 ns 3 IF=20A, dI/dt=500A/µs ns 13 19 25 48.5 69.5 90.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using