AOD2810

AOD2810 80V N-Channel MOSFET General Description Product Summary The AOD2810 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 80V 46A RDS(ON) (at VGS=10V) < 8.5mΩ RDS(ON) (at VGS=6V) < 12mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev 0: Dec. 2012 IAS 35 A EAS 61 mJ 100 Steady-State Steady-State W 50 2.5 RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s A 8.5 PDSM Junction and Storage Temperature Range A 10.5 PD TA=25°C V 160 IDSM TA=70°C ±20 36 IDM TA=25°C Continuous Drain Current Units V 46 ID TC=100°C Maximum 80 -55 to 175 Typ 16 41 1.15 www.aosmd.com °C Max 20 50 1.5 Units °C/W °C/W °C/W Page 1 of 6 AOD2810 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 2.3 ID(ON) On state drain current VGS=10V, VDS=5V 160 TJ=55°C ±100 nA 2.8 3.4 V 6.8 8.5 14.2 18 VGS=6V, ID=20A 8.7 12 mΩ 50 1 V 46 A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Crss Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=40V, f=1MHz Gate Source Charge Qgd tD(on) VGS=10V, VDS=40V, ID=20A 0.6 mΩ S 1871 pF 265 pF 14 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs A 0.73 DYNAMIC PARAMETERS Ciss Input Capacitance Rg µA 5 VGS=10V, ID=20A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 80 VDS=80V, VGS=0V IDSS RDS(ON) Typ pF 1.3 2.0 26.5 38 Ω nC 8.5 nC Gate Drain Charge 4 nC Turn-On DelayTime 11.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 8.5 ns 21.5 ns tf Turn-Off Fall Time 5.5 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 32 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 162 ns nC VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using