AOD2816

AOD2816 80V N-Channel MOSFET General Description Product Summary The AOD2816 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 80V 35A RDS(ON) (at VGS=10V) < 15mΩ RDS(ON) (at VGS=6V) < 29mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.1.0: November 2012 IAS 25 A EAS 31 mJ 53.5 Steady-State Steady-State W 26.5 2.5 RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s A 7 PDSM Junction and Storage Temperature Range A 8.5 PD TA=25°C V 100 IDSM TA=70°C ±20 27 IDM TA=25°C Continuous Drain Current Units V 35 ID TC=100°C Maximum 80 -55 to 175 Typ 16 41 2.2 www.aosmd.com °C Max 20 50 2.8 Units °C/W °C/W °C/W Page 1 of 6 AOD2816 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 100 TJ=55°C ±100 nA 3 3.5 V 12 15 21 26 VGS=6V, ID=20A 18 29 mΩ 34 1 V 35 A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=40V, ID=20A VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω 0.4 mΩ S 1109 pF 154 pF 9 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) A 0.74 DYNAMIC PARAMETERS Ciss Input Capacitance Crss µA 5 VGS=10V, ID=20A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 80 VDS=80V, VGS=0V IDSS RDS(ON) Typ 0.95 pF 1.5 Ω 14.5 22 nC 5 10 nC 4.5 nC 3.2 nC 8 ns 4 ns 17 ns tf Turn-Off Fall Time 3 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 30 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 122 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 40 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.8°C/W PD 0.1 Ton Single Pulse 0.01 1E-05 0.0001 T 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: November 2012 www.aosmd.com Page 4 of 6 AOD2816 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 TA=100°C TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=150°C TA=125°C 10 50 40 30 20 10 1 0 1 10 100 0 25 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 40 Power (W) Current rating ID(A) TA=25°C 1000 30 20 17 5 2 10 100 10 10 1 1E-05 0 0 25 50 75 100 125 150 0.001 0.1 175 10 1000 0 18 TCASE (°C) Figure 14: Current De-rating (Note F) Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: November 2012 www.aosmd.com Page 5 of 6 AOD2816 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.1.0: November 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6