AOD2910

AOD2910 100V N-Channel MOSFET General Description Product Summary VDS The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100V 31A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS=4.5V) < 33mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0: Sep. 2012 IAS 15 A EAS 11 mJ 53.5 Steady-State Steady-State W 26.5 2.5 RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s A 5 PDSM TA=70°C A 6.5 PD TC=100°C V 80 IDSM TA=70°C ±20 21.5 IDM TA=25°C Continuous Drain Current Units V 31 ID TC=100°C Maximum 100 -55 to 175 Typ 16 41 2.2 www.aosmd.com °C Max 20 50 2.8 Units °C/W °C/W °C/W Page 1 of 6 AOD2910 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 80 TJ=55°C TJ=125°C VGS=4.5V, ID=18A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 2.15 2.7 V 18.5 24 33 42 24.5 33 mΩ 1 V 31 A A 40 0.72 DYNAMIC PARAMETERS Input Capacitance Ciss VGS=0V, VDS=50V, f=1MHz 0.5 mΩ S 1190 pF 95 pF 7 VGS=0V, VDS=0V, f=1MHz Units µA 5 VGS=10V, ID=20A Static Drain-Source On-Resistance Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ 1.1 pF 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16.5 25 nC Qg(4.5V) Total Gate Charge 7 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=50V, ID=20A 4.5 nC 2.5 nC 7 ns VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 8 ns 20 ns tf Turn-Off Fall Time 3 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 30 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 145 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using