AOD2910E

AOD2910E 100V N-Channel MOSFET General Description Product Summary • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • ESD protected • Optimized for fast-switching applications VDS Applications ID (at VGS=10V) 100V 37A RDS(ON) (at VGS=10V) < 23mΩ RDS(ON) (at VGS=4.5V) < 33mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO252 DPAK Top View D Bottom View D D G S G S S G Orderable Part Number Package Type Form Minimum Order Quantity AOD2910E TO-252 Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH VDS Spike C 10µs TC=25°C Power Dissipation B Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.1.0: September 2015 IAS 14 A EAS 10 mJ 120 V 71.5 6.2 Steady-State Steady-State RθJA RθJC www.aosmd.com W 4.0 TJ, TSTG Symbol t ≤ 10s W 35.5 PDSM TA=70°C A 9 PD TA=25°C A A 11 VSPIKE TC=100°C V 70 IDSM TA=70°C ±20 26 IDM TA=25°C Continuous Drain Current Units V 37 ID TC=100°C C Maximum 100 -55 to 175 Typ 15 40 1.7 °C Max 20 50 2.1 Units °C/W °C/W °C/W Page 1 of 6 AOD2910E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 1.6 ±10 µA 2.15 2.7 V 18.5 23 33 42 23.5 33 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 40 VSD Diode Forward Voltage IS=1A, VGS=0V 0.72 IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=16A DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=20A Coss Units V VDS=100V, VGS=0V IDSS Max mΩ mΩ S 1 V 37 A 1200 VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) 0.5 pF 93 pF 6.3 pF 1.0 1.5 Ω 16.5 25 nC 8 14 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 3.5 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time 3 ns tD(off) Turn-Off DelayTime 22 ns tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=50V, ID=20A VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 3 ns IF=20A, di/dt=500A/µs 25 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 120 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.1°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: September 2015 www.aosmd.com Page 4 of 6 AOD2910E 100 50 80 40 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 40 20 30 20 10 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: September 2015 www.aosmd.com Page 5 of 6 AOD2910E Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: Resistive Switching Test Circuit & Waveforms Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: September 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6