AOD2HC60

AOD2HC60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD2HC60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700 IDM 14A RDS(ON),max < 2Ω Qg,typ 7.6nC Eoss @ 400V 1.6µC 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View D Bottom View D D G G S S S G AOD2HC60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB VGS TC=25°C TC=100°C Maximum 600 Units V ±30 V 2.5 ID 2 A Pulsed Drain Current C IDM 14 Avalanche Current C IAR 7.5 A Repetitive avalanche energy C EAR 28 mJ Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 132 100 20 74 mJ V/ns 0.6 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev.1.0 April 2013 dv/dt PD TJ, TSTG TL Symbol RθJA RθCS W Typical 45 Maximum 55 Units °C/W 1.3 0.5 1.7 °C/W °C/W RθJC www.aosmd.com Page 1 of 6 AOD2HC60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=5V, ID=250µA VGS(th) ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.59 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 ±100 3 µA 4 5 nΑ V 2 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.8A 1.65 gFS Forward Transconductance VDS=40V, ID=1.25A 2.3 VSD Diode Forward Voltage IS=1A,VGS=0V 0.78 IS Maximum Body-Diode Continuous Current 2.5 A ISM Maximum Body-Diode Pulsed Current 14 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Co(er) Effective output capacitance, energy related I Crss Effective output capacitance, time related J Reverse Transfer Capacitance Rg Gate resistance Co(tr) 466 pF 23 pF 19 pF 31 pF VGS=0V, VDS=100V, f=1MHz 1.3 pF VGS=0V, VDS=0V, f=1MHz 6.3 Ω VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge Qgd tD(on) S 7.6 VGS=10V, VDS=480V, ID=2.5A 10 nC 3.1 nC Gate Drain Charge 1.4 nC Turn-On DelayTime 18 ns 14 ns 27 ns 17 ns ns µC VGS=10V, VDS=300V, ID=2.5A, RG=25Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=2.5A,dI/dt=100A/µs,VDS=100V 183 Qrr Body Diode Reverse Recovery Charge IF=2.5A,dI/dt=100A/µs,VDS=100V 2.1 Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using