AOD2N100

AOD2N100 1000V,2A N-Channel MOSFET General Description Product Summary The AOD2N100 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS 1100V@150℃ ID (at VGS=10V) 2A RDS(ON) (at VGS=10V) < 9Ω 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View D Bottom View D D G G S S S G AOD2N100 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C Maximum 1000 Units V ±30 V 2 ID 1.2 A IDM 7 Avalanche Current C IAR 1.9 A Repetitive avalanche energy C EAR 54 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 108 5 83 mJ V/ns W 0.7 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev.1.0 March 2013 PD TJ, TSTG TL Symbol RθJA RθCS Typical 45 Maximum 55 Units °C/W 1.2 0.5 1.5 °C/W °C/W RθJC www.aosmd.com Page 1 of 6 AOD2N100 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 1000 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 1100 ID=250µA, VGS=0V V V/ oC 1 VDS=1000V, VGS=0V 1 VDS=800V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ±100 3.3 µA 4 4.5 nΑ V 9 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A 7.5 gFS Forward Transconductance VDS=40V, ID=1A 2 VSD Diode Forward Voltage IS=1A,VGS=0V S 0.76 IS Maximum Body-Diode Continuous Current 2 A ISM Maximum Body-Diode Pulsed Current 7 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 380 477 580 pF 20 31 45 pF 1.5 2.7 4.0 pF 1.5 3.1 4.8 Ω 6 9.7 15 nC VGS=10V, VDS=800V, ID=2A Qgs Gate Source Charge 2.6 nC Qgd Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 20 ns tr Turn-On Rise Time 19 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=2A,dI/dt=100A/µs,VDS=100V 220 287 350 Qrr Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V 1.5 2.2 3.0 VGS=10V, VDS=500V, ID=2A, RG=25Ω 29 ns 21 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using