AOD380A60C/AOI380A60C
600V, a MOS5 TM N-Channel Power Transistor
General Description
Product Summary
• Proprietary aMOS5TM technology
• Low RDS(ON)
• Optimized switching parameters for better EMI
performance
• Enhanced body diode for robustness and fast reverse
recovery
VDS @ Tj,max
700V
IDM
44A
RDS(ON),max
< 0.38Ω
Qg,typ
18nC
Eoss @ 400V
2.6mJ
Applications
100% UIS Tested
100% Rg Tested
• SMPS with PFC, Flyback and LLC topologies
• Silver ATX,adapter,TV,lighting,Server power
TO252
DPAK
Top View
TO-251A
IPAK
Bottom View
Top View
D
Bottom View
D
D
D
D
D
D
G
S
G
G
S
G D
AOI380A60C
S
AOD380A60C
S
D
G
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOD380A60C
AOI380A60C
TO252
TO251A
Tape&Reel
Tube
2500
3500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
Gate-Source Voltage (dynamic) AC( f>1Hz)
TC=25°C
Continuous Drain
TC=100°C
Current
Pulsed Drain Current
C
Maximum
600
Units
V
VGS
±20
V
VGS
±30
V
11
ID
A
7.2
IDM
44
Avalanche Current C
IAR
2.5
A
Repetitive avalanche energy C
EAR
3.1
mJ
EAS
210
100
20
125
1.0
-55 to 150
W
W/°C
°C
300
°C
Single pulsed avalanche energy G (TJ=25°C,
VGS=10V, IL=2Apk, L=105mH, RGS=25W)
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Rev.3.0: September 2020
dv/dt
PD
TJ, TSTG
TL
Symbol
RqJA
RqCS
RqJC
www.aosmd.com
mJ
V/ns
Typical
Maximum
Units
45
55
°C/W
-0.8
0.5
1
°C/W
°C/W
Page 1 of 6
AOD380A60C/AOI380A60C
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250μA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
VDS=5V, ID=250mA
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS
ID=250μA, VGS=0V, TJ=150°C
700
ID=250μA, VGS=0V
0.44
V
o
V/ C
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
mA
±100
nA
3.2
3.8
V
VGS=10V, ID=5.5A
0.33
0.38
Ω
Forward Transconductance
VDS=10V, ID=5.5A
9.3
VSD
Diode Forward Voltage
IS=5.5A,VGS=0V
0.85
IS
ISM
S
1.2
V
Maximum Body-Diode Continuous Current
11
A
Maximum Body-Diode Pulsed Current C
44
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
H
related
Crss
Effective output capacitance, time
I
related
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
2.6
955
pF
29
pF
30
pF
122
pF
VGS=0V, VDS=100V, f=1MHz
2.4
pF
f=1MHz
4.8
Ω
18
nC
7
nC
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=480V, ID=5.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
4.5
nC
tD(on)
Turn-On DelayTime
20
ns
tr
Turn-On Rise Time
13
ns
tD(off)
Turn-Off DelayTime
43
ns
tf
trr
Turn-Off Fall Time
16
ns
251
ns
Irm
Peak Reverse Recovery Current
19
Qrr
Body Diode Reverse Recovery Charge
A
mC
VGS=10V, VDS=400V, ID=5.5A,
RG=5W
Body Diode Reverse Recovery Time
IF=5.5A, dI/dt=100A/ms, VDS=400V
3.1
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
