AOD3C50

AOD3C50 500V,3A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 600V IDM 12A RDS(ON),max < 1.4Ω Applications Qg,typ 12nC Eoss @ 400V 1.5µJ 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom TO-252 DPAK Top View D Bottom View D D G S G G S S AOD3C50 Orderable Part Number Package Type Form Minimum Order Quantity AOD3C50 TO-252 Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C Avalanche Current C Units V ±30 V 3* ID A 3 IDM L=1mH Maximum 500 12 IAR 3 A Repetitive avalanche energy C EAR 4.5 mJ Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 152 100 20 83 0.7 -55 to 150 mJ W W/°C °C 300 °C dv/dt PD TJ, TSTG TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-CaseD,F * ID limited by Rated ID RθJC Rev.1.0: January 2014 V/ns Typical Maximum 45 55 °C/W 1.2 0.5 1.5 °C/W °C/W www.aosmd.com Units Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±30V VDS=5V, ID=250µA RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance VDS=40V, ID=1.5A 2.5 VSD Diode Forward Voltage IS=1A,VGS=0V 0.78 IS Maximum Body-Diode Continuous Current 3 A ISM Maximum Body-Diode Pulsed Current C 12 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related I Crss Effective output capacitance, time related J Reverse Transfer Capacitance Rg Gate resistance Co(tr) ID=250µA, VGS=0V, TJ=150°C 600 ID=250µA, VGS=0V 0.4 Gate Source Charge Qgd V/ oC VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 VGS=10V, ID=2.2A VGS=0V, VDS=100V, f=1MHz ±100 3 µA nA 4.1 5 V 1.1 1.4 Ω 1 V S 662 pF 26 pF 19 pF 35 pF 9.7 pF 3 Ω VGS=0V, VDS=0 to 400V, f=1MHz VGS=0V, VDS=100V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs V 12 VGS=10V, VDS=400V, ID=3A 25 nC 3.4 nC Gate Drain Charge 4.4 nC tD(on) Turn-On DelayTime 21 ns tr Turn-On Rise Time 28 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=250V, ID=3A, RG=25Ω 32 ns tf trr Turn-Off Fall Time 21 ns IF=3A,dI/dt=100A/µs,VDS=100V 260 Qrr Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V 2.3 ns µC Body Diode Reverse Recovery Time A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using