AOD3N80

AOD3N80 800V,2.8A N-Channel MOSFET General Description Product Summary The AOD3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS 900V@150℃ ID (at VGS=10V) 2.8A RDS(ON) (at VGS=10V) < 4.8Ω 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View D Bottom View D D G G S S S G AOD3N80 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C Maximum 800 Units V ±30 V 2.8 ID 1.8 A IDM 9 Avalanche Current C IAR 2.2 A Repetitive avalanche energy C EAR 72 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 145 5 83 mJ V/ns W 0.7 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev.1.0 May 2013 PD TJ, TSTG TL Symbol RθJA RθCS Typical 45 Maximum 55 Units °C/W 1.2 0.5 1.5 °C/W °C/W RθJC www.aosmd.com Page 1 of 6 AOD3N80 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 800 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 900 V ID=250µA, VGS=0V 0.78 V/ oC VDS=800V, VGS=0V 1 VDS=640V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ±100 3.3 4.2 4.5 nΑ V 4.8 Ω 1 V 2.8 A 9 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.5A 3.8 gFS Forward Transconductance VDS=40V, ID=1.5A 2.5 VSD Diode Forward Voltage IS=1A,VGS=0V 0.77 IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance S 510 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=640V, ID=3A µA pF 39 pF 3.7 pF 2.9 Ω 10 nC Qgs Gate Source Charge 2.6 nC Qgd Gate Drain Charge 2.9 nC tD(on) Turn-On DelayTime 21 ns tr Turn-On Rise Time 25 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=400V, ID=3A, RG=25Ω 34 ns 19 ns IF=3A,dI/dt=100A/µs,VDS=100V 344 Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V 2.2 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using