AOD403_003

AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. VDS ID (at VGS= -20V) -30V -70A RDS(ON) (at VGS= -20V) < 6.2mΩ (< 6.7mΩ∗) RDS(ON) (at VGS = -10V) < 8mΩ (< 8.5mΩ∗) 100% UIS Tested 100% Rg Tested TO252 DPAK Top View TO251A IPAK Bottom View D Bottom View Top View D D S G G G S Gate-Source Voltage VGS TC=25°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State A IAS, IAR -50 A EAS, EAR 125 mJ 90 W 45 2.5 RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s A -15 PDSM Junction and Storage Temperature Range V -12 PD TA=25°C ±25 -200 IDSM TA=70°C Units V -55 IDM TA=25°C Continuous Drain Current Maximum -30 -70 ID TC=100°C S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current G D D S G -55 to 175 Typ 16 41 0.9 °C Max 20 50 1.6 Units °C/W °C/W °C/W * package TO251A Rev.9.0: July 2013 www.aosmd.com Page 1 of 6 AOD403/AOI403 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -200 nA -3.5 V 5.1 6.2 7.6 9.2 6.2 8 mΩ VGS=-20V, ID=-20A TO251A 5.6 6.7 mΩ VGS=-10V, ID=-20A TO251A 6.7 8.5 mΩ 42 gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA ±100 TO252 VGS=-10V, ID=-20A TO252 Coss Units -2.5 VGS=-20V, ID=-20A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=-10V, VDS=-15V, ID=-20A A -0.7 mΩ S -1 V -70 A 2310 2890 3500 pF 410 585 760 pF 280 470 660 pF 1.9 3.8 5.7 Ω 40 51 61 nC 10 12 14 nC 16 22 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 14 18 22 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 9 11 13 10 VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω 16 ns 12 ns 45 ns 22 ns ns nC 1in2 A. The value of RθJA is measured with the device mounted on FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using