AOD407

AOD407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. VDS (V) = -60V ID = -12A (VGS = -10V) RDS(ON) < 115mW (VGS = -10V) RDS(ON) < 150mW (VGS = -4.5V) 100% UIS tested 100% RG tested -RoHS Compliant -Halogen Free* TO252 DPAK TopView Bottom View D D D S D G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Case Rev.8.0: August 2019 B IDM -30 IAR -12 A EAR 23 A mJ 50 W 25 2.5 TJ, TSTG t ≤ 10s Steady-State Steady-State W 1.6 -55 to 175 Symbol A V -10 PDSM TA=70°C A ±20 ID PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Units V -12 TC=100°C Pulsed Drain Current Maximum -60 RqJA RqJC www.aosmd.com Typ 16.7 40 2.5 °C Max 25 50 3 Units °C/W °C/W °C/W Page 1 of 6 AOD407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -60 VDS=-48V, VGS=0V Max Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 -1 TJ=55°C VGS=-10V, ID=-12A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-8A -5 mA ±100 nA -2.1 -3 V 91 115 A 150 114 gFS Forward Transconductance VDS=-5V, ID=-12A 12.8 VSD Diode Forward Voltage IS=-1A,VGS=0V -0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Units V -0.003 IDSS RDS(ON) Typ 150 mW mW S -1 V -12 A 987 pF VGS=0V, VDS=-30V, f=1MHz 114 pF VGS=0V, VDS=0V, f=1MHz 9.5 15 W SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) 15.8 22 nC Qg(4.5V) Total Gate Charge (4.5V) 7.4 12 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 46 VGS=-10V, VDS=-30V, ID=-12A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/ms VGS=-10V, VDS=-30V, RL=2.5W, RGEN=3W IF=-12A, dI/dt=100A/ms pF 3 nC 3.5 nC 9 ns 10 ns 25 ns 11 ns 27.5 ns nC 30 A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using