AOD4100

AOD4100 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a High side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* Features VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6.5m Ω (VGS = 20V) RDS(ON) < 9m Ω (VGS = 12V) RDS(ON) < 12m Ω (VGS = 10V) 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D Bottom View D G S S G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current C Avalanche Current C Maximum 25 ±30 50 49 120 28 118 50 25 6.5 4.2 -55 to 175 Units V V A A mJ W W °C Max 19 52 3 Units °C/W °C/W °C/W VGS TC=25°C G TC=100°C ID IDM IAR EAR PD PDSM Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Case D Symbol RθJA RθJC Typ 16 43 2 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4100 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS= ±30V VDS=VGS ID=250µA VGS=12V, VDS=5V VGS=20V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=12V, ID=20A VGS=10V, ID=20A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V 2 120 5.4 7.5 7.3 9.8 43 0.72 1 50 1100 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 420 200 0.8 20 VGS=10V, VDS=12.5V, ID=20A 17 6.5 6.8 9.5 VGS=10V, VDS=12.5V, RL=0.68Ω, RGEN=0.6Ω IF=20A, dI/dt=100A/µs 13.5 11.5 5.4 32 19 nC nC ns ns ns ns ns nC 1.5 24 1350 6.5 9 9 12 S V A pF pF pF Ω nC mΩ 3.2 Min 25 1 5 100 4 Typ Max Units V µA nA V A STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(12V) Total Gate Charge Qg(10V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on t