AOD4106

AOD4106 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4106 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a low side switch in SMPS and general purpose applications. Standard Product AOD4106 is Pb-free (meets ROHS & Sony 259 specifications). AOD4106L is a Green Product ordering option. AOD4106 and AOD4106L are electrically identical. Features VDS (V) = 25V ID = 50A (VGS = 20V) RDS(ON) < 5mΩ (VGS = 20V) RDS(ON) < 6.5mΩ (VGS = 12V) RDS(ON) < 8.1mΩ (VGS = 10V) UIS Tested Rg,Ciss,Coss,Crss Tested TO-252 D-PAK Top View Drain Connected to Tab D G S G D S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B Power Dissipation A C C Maximum 25 ±30 50 50 180 30 135 75 38 6.25 4 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A,D Maximum Junction-to-Ambient A,D Maximum Junction-to-Ambient B Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 1.5 Max 20 50 2.0 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD4106 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS= ±30V VDS=VGS ID=250µA VGS=12V, VDS=5V VGS=20V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=12V, ID=20A VGS=10V, ID=20A gFS VSD IS Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current G 2 180 4.1 6.5 5.4 6.6 26 0.7 1 50 1561 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 642 323 2.5 26.5 VGS=10V, VDS=12.5V, ID=20A 22.5 8.3 10 12 VGS=10V, VDS=12.5V, RL=0.63Ω, RGEN=3Ω IF=20A, dI/dt=100A/ µs 19 17 9.5 32 24 40 3.8 33 1875 6.5 8.1 5.0 3 Min 25 1 5 100 4 Typ Max Units V uA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(12V) Total Gate Charge Qg(10V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/ µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on t