AOD4110

SRFET AOD4110 N-Channel Enhancement Mode Field Effect Transistor TM General Description The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOD4110 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID =40A (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) UIS Tested! Rg,Ciss,Coss,Crss Tested D TO-252 D-PAK Top View Drain Connected to Tab G S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain CurrentA Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation Power Dissipation B C Maximum 30 ±20 40 40 180 22 18 25 94 63 31 6 4 -55 to 175 Units V V A TC=25°C G G TC=100°C TA=25°C TA=70°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W °C TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 2 Max 20 50 2.4 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4110 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions ID=250uA, VGS=0V VDS=30V, VGS=0V TJ=125°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage G Maximum Body-Diode + Schottky Continuous Current TJ=125°C 1.3 180 6 9.0 8.5 55 0.37 0.5 40 2154 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 474 185 0.75 37 VGS=10V, VDS=15V, ID=20A 17.8 6.6 7.6 6.8 VGS=10V, VDS=15V, RL=0.75Ω , RGEN=3Ω IF=20A, dI/dt=300A/µs 2 Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 0.1 20 0.1 1.6 2 7.2 11.0 10.5 mA µA V A mΩ mΩ S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 2650 1.1 45 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time nC nC nC ns ns ns ns 18 ns nC 7.2 25.2 5.8 12 10.5 Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using