AOD4128

AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. The device can also be used in PWM, load switching and general purpose applications. Standard Product AOD412 8 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 25V (VGS = 10V) ID = 60 A RDS(ON) < 4 mΩ (VGS = 10V) RDS(ON) < 7 mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation Power Dissipation B C Maximum 25 ±20 60 60 165 45 304 75 37 2.0 1.3 -55 to 175 Units V V TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG A mJ W W °C TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady State Steady State RθJA RθJC Typ 18 50 1 Max 25 60 2 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4128 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=25V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A, VGS=0V Diode Forward Voltage G Maximum Body-Diode Continuous Current TJ=125°C 1.3 165 3.4 5.0 5.8 55 0.7 1 60 3578 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 731 438 2.5 61.8 VGS=10V, VDS=12.5V, ID=20A 29.8 8.5 12.9 11.6 VGS=10V, VDS=12.5V, RL=0.63Ω, RGEN=3Ω IF=20A, dI/dt=100A/µs 17.7 45 20 39 32 48 4300 950 615 4 80 39 4 6 7 1.6 Min 25 1 5 100 2.5 Typ Max Units V uA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using