AOD4130

AOD4130/AOI4130 60V N-Channel MOSFET General Description Product Summary The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 60V 30A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS=4.5V) < 30mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK TopView Top View Bottom View TO-251A IPAK D D S D D G G Gate-Source Voltage S VGS TC=25°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C IAS, IAR Avalanche energy L=0.1mH C TC=25°C EAS, EAR Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 1: June 2011 Steady-State Steady-State A A 27 A 36.5 mJ 52 W 25 2.5 RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s V 5 PDSM TA=70°C ±20 6.5 PD TC=100°C Units V 74 IDSM TA=70°C Maximum 60 20 IDM TA=25°C S D 30 ID TC=100°C G D Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Continuous Drain Current G S S G D Bottom View -55 to 175 Typ 12.4 34 2.4 www.aosmd.com °C Max 20 50 2.9 Units °C/W °C/W °C/W Page 1 of 6 AOD4130/AOI4130 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Max 60 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=5V, ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 74 Units V VDS=60V, VGS=0V VGS(th) 100 nA 2.2 2.8 V 19.5 24 37.5 45 VGS=4.5V, ID=20A 24 30 mΩ 55 1 V 46 A VGS=10V, ID=20A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance A 0.76 mΩ S 1265 1582 1900 pF VGS=0V, VDS=30V, f=1MHz 70 100 130 pF 40 67 95 pF VGS=0V, VDS=0V, f=1MHz 1.8 3.6 5.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 23 28.3 34 nC Qg(4.5V) Total Gate Charge 11 13.4 16 nC 3.6 4.5 5.4 nC 4.3 7.2 10 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=30V, ID=20A 7.5 VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω ns 6.5 ns 33 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 15 7.5 22 30 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 53 76 100 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using