AOD4132L

AOD4132 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 6mΩ (VGS = 4.5V) -RoHS Compliant -Halogen Free* 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D D Bottom View G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G VGS TC=25°C G TC=100°C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C TC=100°C Power Dissipation A TA=70°C C V ID 63 200 IAR 30 A EAR 112 mJ 2.5 W 1.6 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 50 TJ, TSTG t ≤ 10s Steady-State Steady-State A 100 PDSM Junction and Storage Temperature Range Maximum Junction-to-Case C ±20 IDM PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 85 B Pulsed Drain Current Power Dissipation B Maximum 30 RθJA RθJC Typ 14.2 39 0.8 °C Max 20 50 1.5 Units °C/W °C/W °C/W www.aosmd.com AOD4132 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 85 TJ=55°C VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A 5 100 nA 3 V 2.8 4 4.4 5.5 4.4 6 mΩ 1 V 85 A A Forward Transconductance VDS=5V, ID=20A 106 VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 3700 VGS=0V, VDS=15V, f=1MHz µA 1.8 gFS DYNAMIC PARAMETERS Input Capacitance Ciss Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ mΩ S 4400 pF 700 pF 390 pF 0.54 0.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 63 76 nC Qg(4.5V) Total Gate Charge 33 40 nC VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=100A/µs 34 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 30 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 8.6 nC 17.6 nC 12 ns 15.5 ns 40 ns 14 ns 41 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175°C may be u sed if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using