AOD413A

AOD413A 40V P-Channel MOSFET General Description Features The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. VDS (V) = -40V (VGS = -10V) ID = -12A RDS(ON) < 44mΩ (VGS = -10V) RDS(ON) < 66mΩ (VGS = -4.5V) 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B,H Pulsed Drain Current TC=100°C Avalanche Current C Power Dissipation B C ±20 V TA=70°C Alpha & Omega Semiconductor, Ltd. IDM -30 IAR -20 mJ 20 25 W 2.5 1.6 -55 to 175 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State A 50 PDSM Junction and Storage Temperature Range Maximum Junction-to-Case F -12 PD TC=100°C Thermal Characteristics Parameter A,G Maximum Junction-to-Ambient A,G Maximum Junction-to-Ambient ID EAR TA=25°C Power Dissipation A Units V -12 C Repetitive avalanche energy L=0.1mH TC=25°C Maximum -40 RθJA RθJC Typ 16.7 40 2 °C Max 25 50 3 Units °C/W °C/W °C/W www.aosmd.com AOD413A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID= -250µA, VGS=0V -40 -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID= -250µA -1.7 ID(ON) On state drain current VGS= -10V, VDS= -5V -30 ±100 VGS= -10V, ID= -12A Static Drain-Source On-Resistance TJ=125°C 22 Diode Forward Voltage IS= -1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge -0.76 900 VGS=0V, VDS= -20V, f=1MHz VGS= -10V, VDS= -20V, ID= -12A Units µA nA V A 66 VSD Rg 44 65 IS Output Capacitance 36 52 VDS= -5V, ID= -12A Reverse Transfer Capacitance -3 52 Forward Transconductance Coss -2 VGS= -4.5V, ID= -8A gFS Crss Max V VDS= -40V, VGS=0V VGS(th) RDS(ON) Typ mΩ S -1 V -12 A 1125 pF 97 pF 68 pF 14 Ω 16.2 21 nC 7.2 9.4 nC Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF= -12A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF= -12A, dI/dt=100A/µs 13.8 3.8 nC Gate Drain Charge 3.5 nC Turn-On DelayTime 6.2 ns Body Diode Reverse Recovery Time VGS= -10V, VDS= -20V, RL=1.6Ω, RGEN=3Ω 8.4 ns 44.8 ns 41.2 ns 21.2 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. -20 E. The static characteristics in Figures 1 to 6 are obtained using