AOD4142

AOD4142 N-Channel SDMOSTM POWER Transistor General Description The AOD4142 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. -RoHS Compliant -Halogen Free* Features VDS (V) = 25V ID = 50A RDS(ON) < 5.3mΩ RDS(ON) < 9.8mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested! 100% R g Tested! Top View D TO-252 D-PAK Bottom View D G S G S G S Absolute Maximum Ratings TA=25° unless otherwise noted C Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current A Avalanche Current C Maximum 25 ±20 50 43 120 17 13 50 63 50 25 2.5 1.6 -55 to 175 Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C IDSM IAR EAR PD PDSM TJ, TSTG TC=25° C ID IDM A Repetitive avalanche energy L=50uH C Power Dissipation B Power Dissipation A C TC=100° C TA=25° TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 2.1 Max 20 50 3 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4142 C Electrical Characteristics (TJ=25° unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=25V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=30A IS=1A, VGS=0V C TJ=125° 1.2 120 4.4 6.6 7.8 65 0.7 1 50 1440 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 310 170 0.8 25 VGS=10V, VDS=12.5V, ID=30A 12 4 5.3 VGS=10V, VDS=12.5V, RL=0.42Ω, RGEN=3Ω IF=30A, dI/dt=500A/µs 9.6 17 1800 445 285 1.6 31 15 4.8 8.9 8 10.4 29 9 12 21 14 25 2160 580 400 2.4 37 18 6 13 5.3 7.9 9.8 2 Min 25 10 50 100 2.5 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° The C. Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150° The value in any given application depends C. on the user's specific board design, and the maximum temperature of 175° may be used if the PCB allow s it. C C, B. The power dissipation PD is based on TJ(MAX)=175° using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175° C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using