AOD417

AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. VDS (V) = -30V (VGS = -10V) ID = -25A RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) -RoHS Compliant -Halogen Free* 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D D Bottom View G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current B,G VGS TA=25°C G TA=100°C Avalanche Current C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C V -20 IDM -60 IAR -14 A EAR 30 mJ 2.5 W 1.6 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 25 TJ, TSTG t ≤ 10s Steady-State Steady-State A 50 PDSM Junction and Storage Temperature Range Maximum Junction-to-Case D ±20 ID PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V -25 Pulsed Drain Current C Repetitive avalanche energy L=0.3mH TC=25°C Maximum -30 RθJA RθJC Typ 16.7 40 2.5 °C Max 25 50 3 Units °C/W °C/W °C/W www.aosmd.com AOD417 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -60 TJ=55°C VGS=-10V, ID=-20A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-7A gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Max -5 VGS=0V, VDS=0V, f=1MHz µA ±100 nA -1.9 -3 V 27 34 A 36 40 55 18 -0.75 mΩ mΩ S -1 V -6 A 920 VGS=0V, VDS=-15V, f=1MHz Units V VDS=-24V, VGS=0V IDSS RDS(ON) Typ pF 140 pF 90 pF 6 9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) 16.2 nC Qg(4.5V) Total Gate Charge (4.5V) 8.2 nC 2.9 nC 3.6 nC VGS=-10V, VDS=-15V, ID=-20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-20A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 14 Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=0.75Ω 8 ns 30 ns 22 ns 26 ns 23 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation P DSM is based on R θJA (