AOD4184A

AOD4184A 40V N-Channel MOSFET General Description Product Summary The AOD4184A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is well suited for high current load applications. VDS 40V 50A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 7mΩ RDS(ON) (at VGS = 4.5V) < 9.5mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev0 : Sep 2009 IAS, IAR 35 A EAS, EAR 61 mJ 50 Steady-State Steady-State W 25 2.3 RθJA RθJC www.aosmd.com W 1.5 TJ, TSTG Symbol t ≤ 10s A 10 PDSM TA=70°C A 13 PD TC=100°C V 120 IDSM TA=70°C ±20 40 IDM TA=25°C Continuous Drain Current Units V 50 ID TC=100°C Maximum 40 -55 to 175 Typ 18 44 2.4 °C Max 22 55 3 Units °C/W °C/W °C/W Page 1 of 6 AOD4184A Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=40V, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 120 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=15A ±100 nA 2.6 V 5.8 7 9.6 12 7.6 9.5 A gFS Forward Transconductance VDS=5V, ID=5A 37 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs mΩ mΩ S 1 V 20 A 1200 1500 1800 pF 150 215 280 pF 80 135 190 pF 2 3.5 5 Ω 21 27 33 nC 10 14 17 nC 3 5 6 nC 3 6 9 nC VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω IF=20A, dI/dt=100A/µs µA 2.1 VSD IS Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VGS(th) RDS(ON) Typ 6 ns 17 ns 30 ns 17 ns 20 29 38 18 26 34 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using