AOD4184L

AOD4184 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4184/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.AOD4184 and AOD4184L are electrically identical. -RoHS Compliant -AOD4184L is Halogen Free VDS (V) = 40V (VGS = 10V) ID = 50A RDS(ON) < 8mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TC=25°C Current B,H ID TC=100°C C Pulsed Drain Current IDM Avalanche Current C IAR C Repetitive avalanche energy L=0.1mH EAR Power Dissipation B Power Dissipation A TC=25°C TC=100°C TA=25°C PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A,G Maximum Junction-to-Ambient A,G Maximum Junction-to-Ambient D,F Maximum Junction-to-Case Alpha & Omega Semiconductor, Ltd. Downloaded from DatasheetLib.com - datasheet search engine PDSM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Maximum 40 ±20 50 40 120 35 61 50 25 2.3 1.45 -55 to 175 Typ 18 44 2.4 Units V V A mJ W °C Max 22 55 3 Units °C/W °C/W °C/W AOD4184 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min Conditions ID=250µA, VGS=0V 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 120 ±100 VGS=10V, I D=20A TJ=125°C Static Drain-Source On-Resistance VDS=5V, ID=20A 100 Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A 2 nA V mΩ S 0.72 VGS=0V, VDS=20V, f=1MHz µA A 11 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance 8 13 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Output Capacitance 6.7 11 Forward Transconductance Coss 3 8.5 gFS Crss 2.2 VGS=4.5V, I D=15A VSD Units V VDS=40V, VGS=0V VGS(th) IS Max 40 IGSS RDS(ON) Typ 1 V 20 A 1500 pF 215 pF 135 pF 3.5 5 27.2 35.4 Ω nC 13.6 nC 4.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge 6.4 nC tD(on) Turn-On DelayTime 6.4 ns tr Turn-On Rise Time 17.2 ns tD(off) Turn-Off DelayTime 29.6 ns tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 16.8 Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 29 Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 26 ns 38 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using