AOD4185

AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current applications. VDS (V) = -40V ID = -40A (VGS = -10V) RDS(ON) < 15mΩ (VGS = -10V) RDS(ON) < 20mΩ (VGS = -4.5V) 100% UIS Tested! 100% Rg Tested! -RoHS Compliant -Halogen Free* TO252 DPAK Top View TO-251A IPAK Bottom View Top View Bottom View D D D D D G S G S S G G D Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TC=25°C Continuous Drain Current B,H Pulsed Drain Current TC=100°C Avalanche Current C Power Dissipation B C Units V ±20 V TA=70°C D,F Alpha & Omega Semiconductor, Ltd. IDM -115 IAR -42 mJ 88 31 W 2.5 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State A 62.5 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Junction-to-Ambient A,G -31 PD TC=100°C Maximum Junction-to-Case D Maximum -40 ID EAR TA=25°C Power Dissipation A S G -40 C Repetitive avalanche energy L=0.1mH TC=25°C S RθJA RθJC Typ 15 41 2 °C Max 20 50 2.4 Units °C/W °C/W °C/W www.aosmd.com AOD4185/AOI4185 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -40 -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -115 ±100 VGS=-10V, ID=-20A Static Drain-Source On-Resistance TJ=125°C 50 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Qgs Gate Source Charge VGS=-10V, VDS=-20V, ID=-20A 2.5 Units µA nA V A 20 VSD Rg 15 23 IS Reverse Transfer Capacitance 12.5 16 VDS=-5V, ID=-20A Output Capacitance -3 19 Forward Transconductance Crss -1.9 VGS=-4.5V, ID=-15A gFS Coss Max V VDS=-40V, VGS=0V VGS(th) RDS(ON) Typ mΩ S -1 V -20 A 2550 pF 280 pF 190 pF 4 6 Ω 42 55 nC 18.6 7 nC Qgd Gate Drain Charge 8.6 nC tD(on) Turn-On DelayTime 9.4 ns tr Turn-On Rise Time 20 ns tD(off) Turn-Off DelayTime 55 ns tf trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 38 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 47 VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω Turn-Off Fall Time 30 ns 49 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using