AOD4186

AOD4186 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for low voltage inverter applications. VDS (V) =40V ID = 35A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 19mΩ (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! TO-252 D-PAK Top View D Bottom View D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current C V A 70 10 IDSM TA=70°C ±20 27 IDM TA=25°C Continuous Drain Current Units V 35 ID TC=100°C Maximum 40 A 8 Avalanche Current C IAR 24 A Repetitive avalanche energy L=0.1mH C EAR 29 mJ TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 50 PD RθJA RθJC Typ 16.7 40 2.5 °C Max 25 50 3 Units °C/W °C/W °C/W www.aosmd.com AOD4186 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=40V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 On state drain current VGS=10V, VDS=5V 100 RDS(ON) Static Drain-Source On-Resistance TJ=55°C 5 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=15A Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Units V 1 Zero Gate Voltage Drain Current gFS Max 40 IDSS IS Typ VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A 2.2 µA 100 nA 2.7 V A 12.4 15 20 24 14.5 19 mΩ mΩ 60 0.75 S 1 V 60 A 780 980 1200 pF 90 130 170 pF 48 80 110 pF 1.9 3.8 5.7 Ω 13.5 17 20 nC 7 9 11 nC 2 2.5 3 nC 2.7 4.5 6.3 nC VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3Ω 6 ns 12 ns 26 ns 7 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 9 12 15 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 24 31 38 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using