AOD424

AOD424 20V N-Channel MOSFET General Description Product Summary The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=4.5V) VDS 20V 45A RDS(ON) (at VGS=4.5V) < 4.4mΩ RDS(ON) (at VGS=2.5V) < 5.7mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 160 18 IDSM TA=70°C ±12 35 IDM TA=25°C Units V 45 ID TC=100°C Maximum 20 A 15 Avalanche Current C IAS, IAR 57 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 162 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev 0: February 2011 2.5 Steady-State Steady-State RθJA RθJC W 1.6 -55 to 175 TJ, TSTG Symbol t ≤ 10s W 50 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 100 PD Typ 16 41 1.2 www.aosmd.com °C Max 20 50 1.5 Units °C/W °C/W °C/W Page 1 of 6 AOD424 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±12V VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 160 100 nA 1 1.6 V 3.6 4.4 5.1 6.2 VGS=2.5V, ID=20A 4.5 5.7 mΩ 1 V 45 A VGS=4.5V, ID=20A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 105 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge µA 5 Gate Threshold Voltage Units V 1 IGSS Coss Max 20 VDS=20V, VGS=0V VGS(th) RDS(ON) Typ mΩ S 3080 3860 4630 pF 520 740 960 pF 350 580 810 pF 0.6 1.4 2.1 Ω 28 36 43 VGS=10V, VDS=10V, ID=20A nC 9 nC Qgd Gate Drain Charge 12 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 13 17 20 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 29 36 43 VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω 8 ns 70 ns 18 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using