AOD4286

AOD4286/AOI4286 100V N-Channel MOSFET General Description Product Summary The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 14A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 68mΩ RDS(ON) (at VGS=4.5V) < 92mΩ 100% UIS Tested TopView TO252 DPAK Bottom View Top View TO-251A IPAK D D D S G AOD4286 D G S Gate-Source Voltage G Pulsed Drain Current Continuous Drain Current Units V ±20 V A 25 4 IDSM TA=70°C S D Maximum 100 10 IDM TA=25°C S 14 ID TC=100°C C G AOI4286 VGS TC=25°C G S D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current D Bottom View A 3 Avalanche Current C IAS 4 A Avalanche energy L=0.1mH C TC=25°C EAS 0.8 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.1. 0: October 2013 2.5 Steady-State Steady-State RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s W 15 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 30 PD TC=100°C -55 to 175 Typ 15 41 4 www.aosmd.com °C Max 20 50 5 Units °C/W °C/W °C/W Page 1 of 6 AOD4286/AOI4286 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 25 TJ=55°C VGS=10V, ID=5A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=3A ±100 nA 2.25 2.9 V 55.5 68 104 126 72.5 92 mΩ 1 V 14 A A Forward Transconductance VDS=5V, ID=5A 14 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units µA 5 gFS Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ mΩ S 390 pF VGS=0V, VDS=50V, f=1MHz 30 pF 3 pF f=1MHz 7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.8 10 nC Qg(4.5V) Total Gate Charge 2.8 5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=50V, ID=5A VGS=10V, VDS=50V, RL=10Ω, RGEN=3Ω 1.1 nC 1.2 nC 6 ns 2.5 ns 18 ns tf Turn-Off Fall Time 2.5 ns trr Body Diode Reverse Recovery Time IF=5A, dI/dt=500A/µs 15 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs 53 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using