AOD442G

AOD442G 60V N-Channel MOSFET General Description Product Summary • Trench Power MV MOSFET technology • Low RDS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant ID (at VGS=10V) VDS Applications 60V 40A RDS(ON) (at VGS=10V) < 18mΩ RDS(ON) (at VGS=4.5V) < 23mΩ 100% UIS Tested 100% Rg Tested • Industrial and Motor Drive applications TO252 DPAK Top View D Bottom View D D S G G S S G Orderable Part Number Package Type Form Minimum Order Quantity AOD442G TO-252 Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy Power Dissipation L=0.1mH TC=25°C B C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: October 2017 13 30 A EAS 45 mJ 60 Steady-State Steady-State W 24 6.2 RθJA RθJC W 4.0 TJ, TSTG Symbol t ≤ 10s A IAS PDSM TA=70°C A 10.5 PD TC=100°C V 90 IDSM TA=70°C ±20 25.5 IDM TA=25°C Continuous Drain Current Units V 40 ID TC=100°C Maximum 60 -55 to 150 Typ 15 40 1.7 www.aosmd.com °C Max 20 50 2.1 Units °C/W °C/W °C/W Page 1 of 6 AOD442G Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ 60 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C VGS=10V, ID=20A ±100 nA 2.1 2.7 V 14 18 24.5 32 23 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 17 gFS Forward Transconductance VDS=5V, ID=20A 62 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Qoss Output Charge VGS=10V, VDS=30V, ID=20A VGS=0V, VDS=30V 0.3 mΩ S 1 V 40 A pF 155 pF 115 pF 0.65 1.1 Ω 47.5 68 nC 24 35 6 nC nC 14.5 nC 8 nC 8 ns 5 ns 30 ns 5.5 ns ns nC tD(on) Turn-On DelayTime Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, di/dt=500A/µs 30 Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 105 Body Diode Reverse Recovery Time mΩ 1920 tr VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω µA 5 1.5 Units V VDS=60V, VGS=0V IDSS Max A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.1°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2017 www.aosmd.com Page 4 of 6 AOD442G TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 40 60 Current rating ID (A) Power Dissipation (W) 80 40 20 30 20 10 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 1 TA=25°C Power (W) Eoss(uJ) 1000 100 0.5 10 0 0 20 40 60 1 1E-05 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H) VDS (Volts) Figure 14: Coss stored Energy ZθJA Normalized Transient Thermal Resistance 0.001 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2017 www.aosmd.com Page 5 of 6 AOD442G Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: October 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6