AOD444

AOD444/AOI444 60V N-Channel MOSFET General Description Product Summary The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. VDS 60V 12A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 60mΩ RDS(ON) (at VGS = 4.5V) < 85mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK TopView TopView Bottom View TO-251A IPAK D D D S Pulsed Drain Current Continuous Drain Current TC=25°C G S C TA=25°C S Maximum 60 Units V ±20 V 9 IDM A 30 4 IDSM TA=70°C D 12 ID TC=100°C G D Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G G S G S G D Bottom View A 3 Avalanche Current C IAS, IAR 19 A Avalanche energy L=0.1mH C EAS, EAR 18 mJ TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: Aug 2009 2.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.3 TJ, TSTG Symbol t ≤ 10s W 10 PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 20 PD TC=100°C -55 to 175 Typ 17.4 50 4 °C Max 30 60 7.5 Units °C/W °C/W °C/W Page 1 of 6 AOD444/AOI444 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=48V, VGS=0V IGSS Gate-Body leakage current VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=10V, VDS=5V 30 100 nA 2.4 3 V 47 60 85 100 VGS=4.5V, ID=6A 67 85 VDS=5V, ID=20A 14 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime µA 5 VDS=0V, VGS= ±20V RDS(ON) Crss V TJ=55°C VGS=10V, ID=12A Output Capacitance Units 1 Zero Gate Voltage Drain Current Coss Max 60 IDSS IS Typ VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=12A A 0.74 mΩ mΩ S 1 V 12 A 360 450 540 pF 40 61 80 pF 16 27 40 pF 0.6 1.4 2.0 Ω 7.5 10 nC 3.8 5 nC 1.2 nC 1.9 nC 4.2 ns VGS=10V, VDS=30V, RL=2.5Ω, RGEN=3Ω 3.4 ns 16 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs 27 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 30 2 ns 35 ns nC A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using