AOD4454

AOD4454 150V N-Channel MOSFET General Description Product Summary VDS The AOD4454 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 150V 20A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 94mΩ RDS(ON) (at VGS=7V) < 110mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C IAS, IAR Avalanche energy L=0.1mH C TC=25°C EAS, EAR Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0: February 2011 3 Steady-State Steady-State 5 A 1.3 mJ W 50 2.5 RθJA RθJC www.aosmd.com W 1.6 TJ, TSTG Symbol t ≤ 10s A 100 PDSM Junction and Storage Temperature Range A 2.5 PD TA=25°C V 40 IDSM TA=70°C ±20 14 IDM TA=25°C Units V 20 ID TC=100°C Maximum 150 -55 to 175 Typ 16 41 1.2 °C Max 20 50 1.5 Units °C/W °C/W °C/W Page 1 of 6 AOD4454 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=250µA, VGS=0V 150 1 TJ=55°C VDS=0V, VGS= ±20V ±100 Gate Threshold Voltage VDS=VGS ID=250µA 3.4 On state drain current VGS=10V, VDS=5V 40 VGS=10V, ID=10A 188 VGS=7V, ID=10A 84 110 mΩ VDS=5V, ID=10A 20 1 V 46 A Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance VGS=0V, VDS=75V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime V A 151 gFS Rg 4.6 94 Static Drain-Source On-Resistance Reverse Transfer Capacitance 4 nA 75.5 RDS(ON) Output Capacitance Units µA 5 VGS(th) Coss Max V VDS=150V, VGS=0V ID(ON) Crss Typ 0.72 mΩ S 655 820 985 pF 50 70 90 pF 13 22 31 pF 0.7 1.4 2.1 Ω 10 15 20 VGS=10V, VDS=75V, ID=10A VGS=10V, VDS=75V, RL=7.5Ω, RGEN=3Ω nC 4 nC 4.4 nC 10.5 ns 5.5 ns 14.5 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 20 32.5 45 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 160 230 300 3 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using